EQUIPOS DE PREPARACIÓN DE MUESTRAS: RF
Plasma Etching / Ashing 
FEDELCO,
S.L.
RF
PLASMA ETCHING / ASHING:
The plasma process is accomplished through the use of a low pressure, RF
induced gaseous discharge. The specimen is loaded into the reaction
chamber and the chamber is evacuated to a vacuum pressure of 0.1 - 2.2
torr. A carrier gas is then introduced into the chamber, raising the
chamber pressure to 0.3 - 1.2 torr, depending on the application.
RF power is applied around the chamber. This excites the carrier gas
molecules and dissociates it into chemically active atoms and molecules.
The mechanism employed in this process is one of ionization. The
combustion products, which are completely dissociated and harmless, are
carried away in the gas stream. The unique property of this process is
that it occurs at relatively low temperatures without employing toxic
chemicals.
The Plasma process is accomplished through the use of a low pressure, RF
induced gaseous discharge, this glow
discharge having a characteristic colour depending
on the gas being used.
With
Oxygen as the process gas the molecules disassociate into chemically
active atoms and molecules, the
‘combustion’ products are carried away in the gas
stream by the Vacuum System.
The unique property of the process is the relatively low temperature at
which it occurs when ashing
typically organic material and avoiding the use of chemicals for
etching processes.
The K1050X consists of a Solid State RF Generator and associated tuning
circuits, Dual Process gas with flow
monitoring needle valve control and Full or Restricted
vent control. It has a Cylindrical Chamber with a Rack Out Draw
system for ease of sample loading.
The Vacuum System is external with Standard Rotary Pump or Optional
Turbo Pump backed by a
Diaphragm Pump. The Rack Out Drawer System can be exchanged
for a Vacuum Loading Port, for special cleaning applications in TEM.
This usually employs an Oxygen/Argon mix
of gases, the Oxygen removing Organic
material (hydrocarbons) and the Argon giving surface etching of the
sample.
